THE MBE GROWTH AND CHARACTERIZATION OF GaSb/GaAs HETEROSTRUCTURE

• Main Authors: Tu, Ming Chang, 杜明昌
• Other Authors: Ueng, herng yih
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/34483231166088702807

碩士 === 國立中山大學 === 電機工程研究所 === 84 === The MBE ( molecular beam epitaxy ) growth characteristics of gallium antimonide by using Solid Ga(7N) and Sb(6N) as sources were studied mainly through the flux control and substrate temperature . And we compare with various techniques in GaSb thin films growth. Surface morphologies related to the growth conditions of the MBE growth GaSb layers using gallium and antimonide presure control method were investigated first. We grow the GaSb epitaxial films on GaAs substrates by MBE at the different temperature 480 ℃ ,510 ℃ ,530 ℃ . In order to grow a high quality of GaSb film, the growth are carefully investigatedas related to the major factors (1) temperature (2) beam flux ratio (V/III) . The films werw grown by MBE are characterized by X-ray SEM , EDS , Hall measurement , Raman spectra andce. From the examinations of surface morphologies for GaSb layers , the optimum growth conditions were obtained as 510 ℃, flux ratio about 4.5 . From Raman spectra, we know the Lo mode intensity is concerned about the quality of the GaSb films . In our experiment 510℃ is the best from the Raman spectra. the Photoluminescence measurement the 795 meV concerned about quality of the GaSb films .In our experiment 510℃ and V/III ratio = 4.5 are the best from the Photoluminescence . It is excepted that based on the growth characteristic studied The MBE growth methods are promising also for the growth of compounds, AlGaSb and GaInSb.