Influence of Manganese Addition and Sintering Conditions to PTCR

• Main Authors: Lo Gun-Man, 羅鋼眠
• Other Authors: Chen, Ying-Chung
• Format: Others
• Language: en_US
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/45932904267696674867

博士 === 國立中山大學 === 電機工程研究所 === 84 === The minium room-temperature resistivity for La-Mn-codoped BaTiO3 with A.S.T. occurs at [La]-5/3[Mn]=0.35 mol%. Most of Mn are in the bulk regions, existing as divalent ions. Theas trivelent ions, should be at the grain boundaries. Thee resistivity of La-doped BaTiO3 increases with the increased Mn even La and Mn are in the balenced situation. Mn exhibits a inhibition effect which results in the increase of grainus, the semiconductivity of La-doped BaTiO3 is decreased by Mn For La-Mn-codoped BaTiO3 without A.S.T., the relationship of La Mn which results in the minimum room-temperature resistivity is [Mn]=0.275 mol%. Mn ions, segregated at the grain boundaries, acceptor levels to reduse the electron generation velocity. content increases, the negative temperature coefficient (NTC) BaTiO3 positive temperature resistivity (PTCR) below Tc will be The NTC effect of BaTiO3 PTCR could be slightly increased by soaking time or slowing cooling rate. The slope of PTCR effect is with the increased Mn content. However, the maximum order of PTCR stsat [Mn] is about0.06~0.09mol%.