Fabrication of phase mask with RIE and its application in fiber gratings
碩士 === 國立中央大學 === 物理學系 === 84 === Phase mask has developed in Reactive Ion Etching system withCF4/O2 (19/1sccm) gas mixtures. The system provides RF power 30 wattand pressure 50 mtorr. The etching of phase mask under different control parameters is studie...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28530310721950222341 |
| Summary: | 碩士 === 國立中央大學 === 物理學系 === 84 === Phase mask has developed in Reactive Ion Etching system
withCF4/O2 (19/1sccm) gas mixtures. The system provides RF power
30 wattand pressure 50 mtorr. The etching of phase mask under
different control parameters is studied using scanning electron
microscope(SEM), and atomic force microscope (AFM). The
application of phase mask in fiber grating is also investigated
in the present study.
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