The study of Deep Levels in Pd and Pt Doped Si P-N Junctions
碩士 === 國立交通大學 === 電子研究所 === 84 === In this thesis, the characteristics of palladium-doped and platinum-doped silicon diodes are studied for the fabrication of the fast switching diodes. The goal of this study is to obtain higher trap concentration to re...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44181085466842886237 |