A Study of High Dielectric Constant Material TiO2 Deposited by Electron Beam Evaporation for DRAM Capacitors
碩士 === 國立交通大學 === 電子研究所 === 84 === In this work, the effects of electrode materials (W, WN, Ta, TaN, Mo, and TiN)on the leakage current of TiO2 films were studied. The optimum electrode materials for high- and low- temperature processe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04098952902900584893 |