| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 84 === In this work, the effects of electrode materials (W, WN, Ta,
TaN, Mo, and TiN)on the leakage current of TiO2 films were
studied. The optimum electrode materials for high- and low-
temperature processes (800 ℃ and 400 ℃) are shown. No
obvious correlation between ψms and Vcrit (voltage at 10E-6 A/
cm2)is found in our experimental results.
We also discussed post-TiO2-deposition annealing effect using
TaN top electrode. The effects of annealing ambient,
annealing temperature, and annealing time are included. In
annealing ambient effect, temperature dependence of
leakage current was investigated. On the other hand, the
effects of TiO2 film thickness and doping concentration of
boron-doped substrate were analyzed. We have then
demonstrated that rapid thermal N2O (RTN2O) annealing is the
most effective method in suppressing leakage current of TiO2
films, compared with furnace O2 (FO) and rapid thermal O2 (RTO)
annealing. For future studies, optimal process conditions of
RTN2O annealing are required to further improve performance of
TiO2 capacitors.
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