W Contacted P+N Junction Diode Using Selective W-CVD
碩士 === 國立交通大學 === 電子研究所 === 84 === This thesis studies the W contacted p+n junction diode with the W film deposited using the selective W-CVD technique. For the Cu/W/p+n junction diode with a W layer of 300 nm, a thermal treatment at 600...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30336415065269209489 |