| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 84 === This thesis studies the W contacted p+n junction diode with the
W film deposited using the selective W-CVD technique. For the
Cu/W/p+n junction diode with a W layer of 300 nm, a thermal
treatment at 600 C for 30 min caused slight degradation to the
devices characteristics. With formation of a self-aligned WNx
layer on the W surface by post CVD-W in situ N2 plasma
treatment, the device remained stable after annealing at 600 C
for 30 min. However, degradation occurred after 650 C anneal for
30 min, presumably due to the permeation of Cu into TEOS oxide.
For the Cu/WNx/W/p+n junction diode with the Cu layer covering
the barrier only, the device was able to sustain a 30 min
thermal treatment up to 650 C without causing degradation. The
WNx layer formed by RTA treatment in NH3 ambient was found to
possess a similar barrier capacity against Cu penetration.
Although WNx layer formation increased the contact resistance,
application of a Ti silicide layer on the Si surface could
reduce the resistance effectively. Copper permeates into the
TEOS oxide passivation layer easily. The nitrogenized
passivation layer could retard the Cu permeation up to 600 C.
In a word, the nitridation treatment not only improved the
barrier capacity of W layer but also suppressed the permeation
of Cu into the passivation layer.
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