Fabrication and Properties od Dielectric Thin Films Grown by rf Magnetron Sputtering
碩士 === 國立交通大學 === 電子研究所 === 84 === The BaxSr1-xTiO3 (BST) film has attracted great attention due to its high dielectric constant, low leakage current, sesistance to process induced damage, good thermal stability and low dissipation factor...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01019097543527090561 |
| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 84 === The BaxSr1-xTiO3 (BST) film has attracted great attention due
to its high dielectric constant, low leakage current, sesistance
to process induced damage, good thermal stability and low
dissipation factor. In this study,we present the physical and
electrical properties of BST films deposited byrf magnetron
sputtering. The effect of the deposition temperature and the
film thickness on the physical and electrical properties of the
films on various substrates were investigated. We found that
the BST films depositedon MgO(100) substrate possess ( 100)
preferred orientation growth. On the other hand, we report the
growth of cerium dioxide film on siliconby on-axis magnertron
sputtering. An amorphous silicon dioxide layer isobserved
between the cerium dioxide film and the silicon substrate. The
electric conduction of the films is well-fitted by a power-law
relation on the basis of the measured results of leakage
current vs. applied voltage.
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