Studies of Structural and Optical Properties in Single Crystal AgGaS2 Grown by Vertical Bridgman under Different Annealing Conditions
碩士 === 國立交通大學 === 電子物理學系 === 84 === In this study we disscuss the structure and characteristics of AgGaS2 single crystal under different annealing conditions. Becsuse 1 wt.%excess S in melt is used,a second phase of Ga2S3 besides the phase...
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ndltd-TW-084NCTU04290312016-02-05T04:16:36Z http://ndltd.ncl.edu.tw/handle/57184321280413748090 Studies of Structural and Optical Properties in Single Crystal AgGaS2 Grown by Vertical Bridgman under Different Annealing Conditions 不同熱理條件下之AgGaS2單晶結構及特性研究 Yan, Ruey-Charng 顏瑞常 碩士 國立交通大學 電子物理學系 84 In this study we disscuss the structure and characteristics of AgGaS2 single crystal under different annealing conditions. Becsuse 1 wt.%excess S in melt is used,a second phase of Ga2S3 besides the phase of AgGaS2 is easily to be form ed as the precipitate during solidification. These precipitate need to be remo ved by thermal annealing ,otherwisethey will form the absorption centers and affect the optical propertiesof crystal seriously. In our experiment , we focus on five different thermal annealing conditions, such as to use materials of A g2S 、Ag、AgGaS2powder、Ga and S to obtain a crystal of better quality. we find that a betterquality of crystal can be obtain by annealing the crystal at tem peratureof 930C for 7 days under gas ambient of Ag2S. Ming-Chih Lee, Chen-Shiung Chang 李明知, 張振雄 1996 學位論文 ; thesis 1 zh-TW |
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碩士 === 國立交通大學 === 電子物理學系 === 84 === In this study we disscuss the structure and characteristics of
AgGaS2 single crystal under different annealing conditions.
Becsuse 1 wt.%excess S in melt is used,a second phase of Ga2S3
besides the phase of AgGaS2 is easily to be form ed as the
precipitate during solidification. These precipitate need to be
remo ved by thermal annealing ,otherwisethey will form the
absorption centers and affect the optical propertiesof crystal
seriously. In our experiment , we focus on five different
thermal annealing conditions, such as to use materials of A g2S
、Ag、AgGaS2powder、Ga and S to obtain a crystal of better
quality. we find that a betterquality of crystal can be obtain
by annealing the crystal at tem peratureof 930C for 7 days under
gas ambient of Ag2S.
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author2 |
Ming-Chih Lee, Chen-Shiung Chang |
author_facet |
Ming-Chih Lee, Chen-Shiung Chang Yan, Ruey-Charng 顏瑞常 |
author |
Yan, Ruey-Charng 顏瑞常 |
spellingShingle |
Yan, Ruey-Charng 顏瑞常 Studies of Structural and Optical Properties in Single Crystal AgGaS2 Grown by Vertical Bridgman under Different Annealing Conditions |
author_sort |
Yan, Ruey-Charng |
title |
Studies of Structural and Optical Properties in Single Crystal AgGaS2 Grown by Vertical Bridgman under Different Annealing Conditions |
title_short |
Studies of Structural and Optical Properties in Single Crystal AgGaS2 Grown by Vertical Bridgman under Different Annealing Conditions |
title_full |
Studies of Structural and Optical Properties in Single Crystal AgGaS2 Grown by Vertical Bridgman under Different Annealing Conditions |
title_fullStr |
Studies of Structural and Optical Properties in Single Crystal AgGaS2 Grown by Vertical Bridgman under Different Annealing Conditions |
title_full_unstemmed |
Studies of Structural and Optical Properties in Single Crystal AgGaS2 Grown by Vertical Bridgman under Different Annealing Conditions |
title_sort |
studies of structural and optical properties in single crystal aggas2 grown by vertical bridgman under different annealing conditions |
publishDate |
1996 |
url |
http://ndltd.ncl.edu.tw/handle/57184321280413748090 |
work_keys_str_mv |
AT yanrueycharng studiesofstructuralandopticalpropertiesinsinglecrystalaggas2grownbyverticalbridgmanunderdifferentannealingconditions AT yánruìcháng studiesofstructuralandopticalpropertiesinsinglecrystalaggas2grownbyverticalbridgmanunderdifferentannealingconditions AT yanrueycharng bùtóngrèlǐtiáojiànxiàzhīaggas2dānjīngjiégòujítèxìngyánjiū AT yánruìcháng bùtóngrèlǐtiáojiànxiàzhīaggas2dānjīngjiégòujítèxìngyánjiū |
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1718180778460839936 |