| Summary: | 碩士 === 國立交通大學 === 電子物理學系 === 84 === In this study we disscuss the structure and characteristics of
AgGaS2 single crystal under different annealing conditions.
Becsuse 1 wt.%excess S in melt is used,a second phase of Ga2S3
besides the phase of AgGaS2 is easily to be form ed as the
precipitate during solidification. These precipitate need to be
remo ved by thermal annealing ,otherwisethey will form the
absorption centers and affect the optical propertiesof crystal
seriously. In our experiment , we focus on five different
thermal annealing conditions, such as to use materials of A g2S
、Ag、AgGaS2powder、Ga and S to obtain a crystal of better
quality. we find that a betterquality of crystal can be obtain
by annealing the crystal at tem peratureof 930C for 7 days under
gas ambient of Ag2S.
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