| Summary: | 碩士 === 國立交通大學 === 電子物理學系 === 84 === In this study, we prepared and characterized Au(
or Pd)/n-AlGaAs Schottky diodes by using low-temperature(LT;T=77
K) process, current-voltage(I-V), and capacitance-voltage(C-V)
measurements. The leakage current density is reduced half for
the diodes fabricated by low-temperature process compared with
which fabricated at room temperature(RT), corresponding to an
increase of Schottky barrierheight to be around 40 meV. For an
Au/Al0.28Ga0.72As sample, the saturationcurrent density is
reduced from 6.4E-12 for RT preparation to 2.4E-12(A/cm2) forLT
processing. The C-V measurements for RT diodes indicate that the
barrier height is raised from 1.17eV for RT diodes to 1.20eV for
LT diodes. In addition,we demonstrated that Se doping can be
used to improved the quality of AlGaAs films by comparing the
barrier heights and saturation current densities of RT and LT
Schottky diodes made on Al0.3Ga0.7As epilayers.
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