The Investigation of End-of-Range Defect Reduction in Shallow Junctions Using Plasma Nitridation and Carbon Implantation

• Main Authors: Hwang, Yih-Chyang, 黃意強
• Other Authors: T.E. Hsieh
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/36325652545423249225

碩士 === 國立交通大學 === 材料科學與工程研究所 === 84 === The end-of-range (EOR) defects were obserced in germanium implantated Si single crystal wafer after thermal annealing. Most of the EOR defects were found to be dislocation loops of interstitial type confined to amorphous-crystalline interface. In this work, we studied the effect of plasma surface nitridation to reduce the EOR defects. Experimental resultsindicated that the Si nitride layer was able to serve as a vacancy source which, in turn, effectively reduced the size and number of the EOR dislocation loops. Another part of this work is to study the effect of carbon implantation to reduce the transient diffusion (TED) of implanted boron. It was foundthat the carbon implantation could effectively remove the EOR defects. However, hair-pin dislocations were also observed after annealing. Thehair-pin dislocations were most likely formed when the projected range (Rp) of carbon implantation was located in the vicinity of the amorphous/crystalline (a/c) interface created by Ge implantation.