| Summary: | 碩士 === 國立交通大學 === 材料科學與工程研究所 === 84 === The end-of-range (EOR) defects were obserced in germanium
implantated Si single crystal wafer after thermal annealing.
Most of the EOR defects were found to be dislocation loops of
interstitial type confined to amorphous-crystalline interface.
In this work, we studied the effect of plasma surface
nitridation to reduce the EOR defects. Experimental
resultsindicated that the Si nitride layer was able to serve as
a vacancy source which, in turn, effectively reduced the size
and number of the EOR dislocation loops.
Another part of this work is to study the effect of carbon
implantation to reduce the transient diffusion (TED) of
implanted boron. It was foundthat the carbon implantation could
effectively remove the EOR defects. However, hair-pin
dislocations were also observed after annealing. Thehair-pin
dislocations were most likely formed when the projected range
(Rp) of carbon implantation was located in the vicinity of the
amorphous/crystalline (a/c) interface created by Ge
implantation.
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