The Study and Characterization of Reactive Ion Etching on AlGaInP/GaInP Laser Diodes
碩士 === 國立成功大學 === 電機工程研究所 === 84 === The reactive ion etching of GaAs, GaInP, AlGaInP, and AlInP in BCl3/Ar or CH4/H2/Ar discharges was investigated as a function of the plasma parameters such as power, pressure, gas flow rate, and relative...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73399575571917769968 |