| Summary: | 碩士 === 國立成功大學 === 電機工程研究所 === 84 === The reactive ion etching of GaAs, GaInP, AlGaInP, and AlInP in
BCl3/Ar or CH4/H2/Ar discharges was investigated as a function
of the plasma parameters such as power, pressure, gas flow
rate, and relative composition as well as etching time. The
etch rates of these materials are faster in BCl3/Ar in compared
to CH4/H2/Ar. The etched surface morphology is smooth for GaAs,
GaInP, AlGaInP, and AlInP in the CH4/H2/Ar discharges, while
the surface for GaAs in the BCl3/Ar discharges is quite rough.
Residual lattice disorder introduced by energetic ion
bombardment during the RIE treatments was observed from
photoluminescence (PL) measurements. The chemical compositions
in the near- surface region of the RIE-treated samples were
examined by Auger electron spectroscopy (AES). These results
can be applied for the fabrication of AlGaInP /GaInP ridge type
index-guided laser diodes.Besides, we have grown AlGaInP/GaInP
strained-multiple-quantum -wells (SMQW) laser structure on
misoriented GaAs substrates by low-pressure metal-organic
chemical vapour deposition (MOCVD). By using a simple wet-
chemical etching step, we have realized a ridge type gain-guide
laser diode. The 5mm wide laser diode with a cavity length of
250mm has a CW threshold current of 30mA at room temperature.
The maximum output power without facet coating can maintain
stable CW operation up to 15mW.
|
|---|
