The preparation and characterization of PbTiO3 ferroelectric thin film for non-volatile memory application

• Main Authors: Hwei Hsiang Shih, 施輝祥
• Other Authors: Yean Kaun Fang
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/35747598186861695808

碩士 === 國立成功大學 === 電機工程研究所 === 84 === Due to the good ferroelectric、piezoelectric and pyroelectric proper-ties，PbTiO3 thin film is widely applied to some electronic devices。In this thesis，we successfully grow a well crystallized PbTiO3 thin film on silicon wafer by rf-magnetron sputtering。Its relative dielec-tric constant (εγ) will increase with the thickness of Pb6TiO3 ferro-electric thin film 。Its maximum value is 33.17 within the thin film thi- ckness range of the device。At the application of nonvalitile memory， we propose the bulk channel floating gate FET as our device*s structure。Comparing with the general ferroelectric memory，we decrease the writing voltage to 10 Volt and the access time is smaller than 150nsec。We can also get the ON/OFF channel conductivity ratio of 54 with a 5 Volt bias voltage between drain and source。