The preparation and characterization of PbTiO3 ferroelectric thin film for non-volatile memory application
碩士 === 國立成功大學 === 電機工程研究所 === 84 === Due to the good ferroelectric、piezoelectric and pyroelectric proper-ties，PbTiO3 thin film is widely applied to some electronic devices。In this thesis，we successfully grow a well crystallized PbTiO3 thin...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/35747598186861695808 |
| Summary: | 碩士 === 國立成功大學 === 電機工程研究所 === 84 === Due to the good ferroelectric、piezoelectric and pyroelectric
proper-ties，PbTiO3 thin film is widely applied to some
electronic devices。In this thesis，we successfully grow a well
crystallized PbTiO3 thin film on silicon wafer by rf-magnetron
sputtering。Its relative dielec-tric constant (εγ) will
increase with the thickness of Pb6TiO3 ferro-electric thin film
。Its maximum value is 33.17 within the thin film thi- ckness
range of the device。At the application of nonvalitile memory，
we propose the bulk channel floating gate FET as our device*s
structure。Comparing with the general ferroelectric memory，we
decrease the writing voltage to 10 Volt and the access time is
smaller than 150nsec。We can also get the ON/OFF channel
conductivity ratio of 54 with a 5 Volt bias voltage between
drain and source。
|
|---|