A Study of -SiC/Si Multilayer Heterojunction structures for Photodetector Applications

• Main Authors: Jing Hong Zhou, 周景弘
• Other Authors: Yean Kaun Fang
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/79403586537486847590

碩士 === 國立成功大學 === 電機工程研究所 === 84 === In this thesis, single-crystal SiC / single-crystal Si ultilayer heterojunction photodetectors were fabricatedn Si substrates by rapid thermal chemical vaporeposition (RTCVD) method. Three different devices' tructures were proposed, that is , (1) double- eterojunction (n+-Si/i-SiC/p+Si), (2) single- eterojunction (n+-SiC/i-SiC/p+-Si) and (3) homojunctiontructure. The optoelectronic characteristics of devicesnclude optical gain, responsivity and response speed wereeasured and analyzed to check the suitability for thepplications in optoelectronic devices.Based on thexperimental results, we find that, among the threeifferent structures, the photodetector with homojunctiontructure possesses the best optoelectronicharacteristics. Its dark current is 25A( under 15.4Veversed bias), and optical gain is 96.6(under 5W incidentptical power) .The peak value of absorption wavelength inpectrum response is 480nm. The response speed is 9.5s forise time and 11.0s for fall time.