| Summary: | 碩士 === 國立成功大學 === 電機工程研究所 === 84 === In this thesis, single-crystal SiC / single-crystal Si
ultilayer heterojunction photodetectors were fabricatedn
Si substrates by rapid thermal chemical
vaporeposition (RTCVD) method. Three different devices'
tructures were proposed, that is , (1) double-
eterojunction (n+-Si/i-SiC/p+Si), (2) single-
eterojunction (n+-SiC/i-SiC/p+-Si) and (3)
homojunctiontructure. The optoelectronic characteristics of
devicesnclude optical gain, responsivity and response speed
wereeasured and analyzed to check the suitability for
thepplications in optoelectronic devices.Based on
thexperimental results, we find that, among the
threeifferent structures, the photodetector with
homojunctiontructure possesses the best
optoelectronicharacteristics. Its dark current is 25A(
under 15.4Veversed bias), and optical gain is 96.6(under 5W
incidentptical power) .The peak value of absorption wavelength
inpectrum response is 480nm. The response speed is 9.5s forise
time and 11.0s for fall time.
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