Surface Modification on silicon

Surface Modification on silicon

碩士 === 逢甲大學 === 材料科學研究所 === 84 === Operation parameters of electroless nickel (EN) plating onto silicon , such as plating bath （E-Chem , OKUNO and GIT）, activation , and sintering , were studied . The microstructure of coating layers was e...

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Main Authors: Wu, Chung-Wen, 吳仲文
Other Authors: Yang Tsong-Jen
Format: Others
Language:zh-TW
Published: 1996
Online Access:http://ndltd.ncl.edu.tw/handle/88665389949458327329
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spelling ndltd-TW-084FCU001590082015-10-13T12:28:52Z http://ndltd.ncl.edu.tw/handle/88665389949458327329 Surface Modification on silicon 矽底材表面改質研究 Wu, Chung-Wen 吳仲文 碩士 逢甲大學 材料科學研究所 84 Operation parameters of electroless nickel (EN) plating onto silicon , such as plating bath （E-Chem , OKUNO and GIT）, activation , and sintering , were studied . The microstructure of coating layers was examined by XRD , AES , SEM , TEM , and XRF .Experimental results show that all kinds of the plating solutions are good for EN deposition . Suitable activation process can improve the wettability and adhesion of the samples . Sintering temperature between 500 and 550℃ is acceptable .OKUNO sample is more porous than GIT sample . The poorer adhesive strength of OKUNO samples is probably caused by the out-diffusion of nickel , silicon and phosphorus , followed by oxidation on the surface Yang Tsong-Jen 楊聰仁 1996 學位論文 ; thesis 111 zh-TW
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language zh-TW
format Others
sources NDLTD
description 碩士 === 逢甲大學 === 材料科學研究所 === 84 === Operation parameters of electroless nickel (EN) plating onto silicon , such as plating bath （E-Chem , OKUNO and GIT）, activation , and sintering , were studied . The microstructure of coating layers was examined by XRD , AES , SEM , TEM , and XRF .Experimental results show that all kinds of the plating solutions are good for EN deposition . Suitable activation process can improve the wettability and adhesion of the samples . Sintering temperature between 500 and 550℃ is acceptable .OKUNO sample is more porous than GIT sample . The poorer adhesive strength of OKUNO samples is probably caused by the out-diffusion of nickel , silicon and phosphorus , followed by oxidation on the surface
author2 Yang Tsong-Jen
author_facet Yang Tsong-Jen
Wu, Chung-Wen
吳仲文
author Wu, Chung-Wen
吳仲文
spellingShingle Wu, Chung-Wen
吳仲文
Surface Modification on silicon
author_sort Wu, Chung-Wen
title Surface Modification on silicon
title_short Surface Modification on silicon
title_full Surface Modification on silicon
title_fullStr Surface Modification on silicon
title_full_unstemmed Surface Modification on silicon
title_sort surface modification on silicon
publishDate 1996
url http://ndltd.ncl.edu.tw/handle/88665389949458327329
work_keys_str_mv AT wuchungwen surfacemodificationonsilicon
AT wúzhòngwén surfacemodificationonsilicon
AT wuchungwen xìdǐcáibiǎomiàngǎizhìyánjiū
AT wúzhòngwén xìdǐcáibiǎomiàngǎizhìyánjiū
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