| Summary: | 碩士 === 國立中正大學 === 化學系 === 84 === Due to the versatile application and fast development of
metal-sulfur thin film in optoelectronics ,especially in
microelectronics devices, metal-sulfur thin film synthesis based
on Metal-Organic Chemical Vapor Deposition (MOCVD) has become an
important and new territory to be explored. In this two-year
seminal work ,MOCVD has been applied in our laboratory for the
growth of metal-sulfur thin film using(μ-S2)Fe(CO)6(1)as a
precursor . 1 undergoes direct
vacuum pyrolysis at 500℃, resulting in Fe1-xS.While FeS was
obtain upon increasing temperature to 750℃.The power-like
product has been analyzed by elemental analysis (EA),and the Fe/
S ratio was determined to be 1:1, indicating that through the
pyrolysis process the stoichiometry of processor 1 remained
unchanged.
The quartz hot-wall reactor has been used for screening the
precursors prepared in this work at different deposition
temperature ,At 500℃ and a deposition rate of 133 (/min ,Fe1-x
S deposition was observed in various substrates ,including Si,
Ag/Si and Au/Si.. Increasing the temperature to 750C with a rate
of deposition of 100(/min ,the thin film product was determined
to be mainly FeS.
In another parallel research direction ,we have attempted to
synthesize dual-metal oxide thin film based on precursors C5H5(
CO)3WCo(CO)4(2) and C5H5(CO)3MoCo(CO)4(3),2 and 3 can be
deposited simultaneously in the hot-wall reactor under 900℃,100
mtorr pressure to obtain dual-nuclei M/Co=(M=W,Mo) metal oxide
thin film (WCoO4 and MoCoO4), indicating that precise
stoichiometry of the mixed-metal oxide thin film can be achieved
by the fine tune of various ratio of processors.
The analyses of thin film have been carried out by XRD,EDS and
ICP-AES. While the surface structure of the film were analyzed
by SEM and AFM.
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