Combustion Synthesis of Silicon Carbide : Direct Synthesis and Using Ignitors

碩士 === 國立中正大學 === 化學工程研究所 === 84 === The thesis is to study synthesis of silicon carbide by the method of Self-Propagating High -Temperature Synthesis(SHS). Becaues of low heat of formationand low adiabatic combustion temperature of Si/C reaction, it is d...

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Bibliographic Details
Main Authors: Wu, Chien-Chun, 吳健君
Other Authors: Chien-Chong Chen
Format: Others
Language:zh-TW
Published: 1996
Online Access:http://ndltd.ncl.edu.tw/handle/63792280417888620525
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Summary:碩士 === 國立中正大學 === 化學工程研究所 === 84 === The thesis is to study synthesis of silicon carbide by the method of Self-Propagating High -Temperature Synthesis(SHS). Becaues of low heat of formationand low adiabatic combustion temperature of Si/C reaction, it is difficult forcombustio wave to be self-sustained. In this study, we adopt two approachs tosynthesize SiC by direct synthesis and using ignitors. Experimental results of direct synthesis : SiC was successfully obta but the reactant pellet was broken and thecombustion wave can not be self-sustained. Thus the reactivity in this situation was lower than that of using oxy- acetylene torch. Because the small particle size of carbon black, the crystallization of SiCwas small and the size was near 10 um with a spherical shape. Results of using ignitors are as follows : For different ignitors, 1. Fe2O3+2Al 2. Cr2O3+2Al 3. TiO2+4/3Al+C 4. Ti+Cwere studied. The reactivity and separability of ignitors 1 and 2 were foundto be good, as compared to ignitors 3 and 4. Among these two ignitors, reactivity of Ti+C ignitor os better than TiO2 thermite ignitor. For the Ti+C ignitor, we find the minimum molar ratio Ti+C/Si+C was 1.75 suchthat the conversion of SiC was higher than 95% . Because larger particle size of graphite was used, the crystallization of SiC surface was also large and size was near 40~50 um with an irrgular shape.