Three-Dimensional Analysis of Heat Transfer and Fluid Flow During Rapid Thermal Processing

• Main Authors: T. M. Chou, 卓統民
• Other Authors: Y. T. Lin
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/69768342202887199242

碩士 === 元智大學 === 機械工程研究所 === 83 === A numerical study of heat transfer and fluid flow has been made relative to rapid thermal processing (RTP) in manufacturing microelectronics on a silicon wafer.The two and three- dimensional temperature and velocity fields have been obtained for several geometric conditions.The Navier- Stokes equations for nitrogen and the energy equations for nitrogen and the wafer were solved.The energy equation of wafer is lumped in the thickness direction and a source term due to the energy absorption from heating lamps and emission from the wafer surfaces is added to the equation. It is shown that flow rate has little effect on the temp- erature distribution across the wafer in the original model ( AG6000 ).However,the uniformity of the wafer temperature does change with the change of positions and gas flow rates of inlets and outlets.The tempreature difference between the wafer center snd its edge reduces from 25 degree of Celsius for the original model to 13 degree of Celsius for an improv- ed model and edge effect which is the main reason for the temperature gradient on the wafer is also reduced about 50%. For the improved model, the gas flow rate causes some effect on the wafer temperature. The results also show that buoyancy and variable properties do not have significant effects on the temperature disturbution on the wafer.