| Summary: | 碩士 === 國立臺灣科技大學 === 工程技術研究所 === 83 === The advance of bipolar junction transistors has led to a
drastic increase in the operating speed and operating current
density of BJT. We reformulated the boundary conditions of
metallurgical junction by taking into account the effect of
nonequilibrium contact, and found that the nonequilibrium
contact indeed affect the current of silicon bipolar
semiconductor devices, it increases the current density.
The effects of series resistance and the nonequilibrium
contact are present at high level injection. If we neglect
the latter we tend to underestimate the value of series
resistance. The a.c. capacitance could become inductive at
high forward-bias voltage. The nonequilibrium contact could
affect the a.c.capacitance, and developed a model to
calculate the a.c. capacitances of diode and BJT.
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