| Summary: | 碩士 === 國立海洋大學 === 電子工程學系 === 83 === In the experiments of etching under illumination,we firstly
discovered that passivative potential of n or p type Si under
illumination would shift to more cathodic or anodic direction
respectively.To get optimized potential of selective
illuminating etching and succeed in fabricating n type mesa
with flat surface and sharp edge surrounded with p type
isolation area,we have studied such parameters related with the
shift of pp as temperature and concentration of KOH solution as
well as power and wavelength of ligh source . As a result,
etching under illumination in KOH is anisotropic ,and this
reveals the possibilities of fabrication of three dimensional
micromachines by the technology. The other subject to be
studied is that we use electrochemical etch-stop techonology to
get cantilever beam silicon thin film as a resonant structure
,and then sputter ZnO on the SiO2/Al/Si to fabricate acoustic
sensors / transmitters(actuators). We have performed
measurements on the piezoelectric device in one-port
configuration,i.e., with both detection and transmission of
acoustic signals,and also have tested the sensitivity of self-
fabricated acoustic sensors by reciprocity principle.Because
the acoustic sensors are fabricated on Si substrate,so they
are compatible with IC processes of sensor systems and they
have larger potential in research.
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