Epitaxial Growth of CuInSe2 Thin Film:Microstructural Control and Annealing Behaviors
博士 === 國立中山大學 === 材料科學(工程)研究所 === 83 === Epitaxial CuInSe2 thin films were grown on GaAs substrate By MBE at 475℃.Domain structure and lattice mismatch problems were evaluated in the CuInSe2/GaAs system. In addition, annealing process was introduced in a...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/95688204580299410448 |