The Study and Fabrication of Picosecond Photoconductive Switches

• Main Authors: LEE, KER CHIN, 李克琴
• Other Authors: HUANG, SHENG LUNG
• Format: Others
• Language: en_US
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/59724916078516548457

碩士 === 國立中山大學 === 光電(科學)研究所 === 83 === GaAs Photoconductive switches as fast optical detectoes have received considerable attention because of the simple structure, ease of monolithic interation, and capability of realizing high-speed response at relatively low bias voltage. In this thesis, the quasi-TEM model and dispersion model are used to design a transmission line with 100-GHz bandwidth. Several photoconductive switches wewe fabricated on undoped semi-insulating ( S.I.) GaAs substrate by using photolithography and lift-off techniques. To obtain high bandwidth-sensitivity product, we successfully fabricated one micron structure on a two hundred micron thick GaAs wafer. An ultrashort green laser pulsed was employed to study the relation between carrier lifetime and carrier transit time. The result can used to improve the device processing procedure for the generation of picosecond electrical pulaes.