| Summary: | 碩士 === 國立中山大學 === 光電(科學)研究所 === 83 === A novel tunable semiconductor laser with very simple device
structure and fabrication technology is demonstrated. It
consists of a laser diode monolithically integrated on top of a
photodiode, with optical coupling between the two devices. The
operation principle of this device is unique, since it relies
on photon recycling to reduce (or increase) the power
dissipation and internal temperature of the laser diode, and
thereby induces a shift to the emitting wavelength. Based on a
set of rate equations, a theoretical model for the device was
developed. Temperature effects on device performance were also
included in this model with the assumption that the laser diode
and the photodiode were at the same equilibrium temperature.
The optical coupling between the laser diode and the photodiode
was discussed to investigate the tuning ability of the device.
A thermal model was also included to discuss the thermal
coupling between the laser diode and the heat sink. The tunable
range depends on the optical coupling between the laser diode
and the photodiode. Through photon recycling, the threshold
pump power and the threshold current of the device can be
reduced by 21.1% and 5.1%, respectively. Based on the
theoretical model calculation, a wavelength shift of 10 nm can
be achieved.
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