Effects of Low Energy Plasma Processes on Hydrogenated Silicon Oxide Deposition in RF Magnetron Discharges

• Main Authors: Tien-I Bao, 包天一
• Other Authors: Lin I
• Format: Others
• Language: zh-TW
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/92063526421086727722

博士 === 國立中央大學 === 物理與天文學研究所 === 83 === The effects of low energy plasma induced (or enhanced) processes on the hydrogenated silicon oxide thin film deposition are investigated in an rf magnetron plasma system using an in situ, real time single wavelength ellipsometer, infrared absorption spectroscopy, current-voltage measurement, etc.. These plasma enhanced processes include the radical generation, reaction and aggregation in gas phase, and the surface heterogeneous species diffusion, reaction and densification processes. Five topics are included in the study: (1) the investigation of the properties of hydrogenated silicon oxide films deposition under different plasma and control parameters, (2) the effect of post deposition low energy pure Ar plasma bombardment on the hydrogenated silicon oxide thin films, (3) the effect of post deposition Ar/O2 plasma oxidation of a-Si:H thin films, (4) SiO2 deposition by rf oxygen plasma enhanced laser ablation from Si, and (5) the effect of the rf magnetron plasma on the particle generation and transport in the laser ablation deposition process.