| Summary: | 博士 === 國立中央大學 === 物理與天文學研究所 === 83 === The effects of low energy plasma induced (or enhanced)
processes on the hydrogenated silicon oxide thin film
deposition are investigated in an rf magnetron plasma system
using an in situ, real time single wavelength ellipsometer,
infrared absorption spectroscopy, current-voltage measurement,
etc.. These plasma enhanced processes include the radical
generation, reaction and aggregation in gas phase, and the
surface heterogeneous species diffusion, reaction and
densification processes. Five topics are included in the
study: (1) the investigation of the properties of hydrogenated
silicon oxide films deposition under different plasma and
control parameters, (2) the effect of post deposition low
energy pure Ar plasma bombardment on the hydrogenated silicon
oxide thin films, (3) the effect of post deposition Ar/O2
plasma oxidation of a-Si:H thin films, (4) SiO2 deposition by
rf oxygen plasma enhanced laser ablation from Si, and (5) the
effect of the rf magnetron plasma on the particle generation
and transport in the laser ablation deposition process.
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