| Summary: | 碩士 === 國立交通大學 === 應用化學系 === 83 === The fabrication, defect inspection and repair of an embedded
attenuated phase shift mask (EAPSM) are nearly identical to the
conventional mask,therefore,EAPSM gained much attention from
semiconductor industry. Currently,the disadvantages of EAPSM
are having the lower conductance and too hight of
transmittance to visible light, etc. In this thesis, study on
the materials for phase shifter in EAPSM is emphasized. The
results are reported as follows: 1. TiNx with thickness 83∼153
nm and degree of phase shift 180°,its transmittane to i-
line(365nm)is in the range of 5∼11%, to visible light,
18∼39%. By changing the composition of this thin film, the
range of transmittance could be altered. TiNx shows
conductivity, with a specific resistance 0.052Ω-cm. The
disadvantage of this film is the lack of resistance to acid
and base. 2. TiSix with thickness ∼83 nm and degree of phase
shift 180°, its transmittance to i-line is∼2%;to visible
light,∼14%. TiSix shows a specific resistance of 0.01Ω-cm.
This thin film is capable of resistance to acid and base. 3.
The combination of TiNx and TiSix could remedy each other'
disadvantages,making film with resistance to acid and base;with
better conductance;with flexibility of changing transmittance;
with reducing reflectivity and visible light transmittance;
also,making the effect on i-line transmittance rather small.
This combination of these two materials is more suitable to
use as the a phase shifter of EAPSM than single material. 4.
Simulation study on the attenuated phase shift mask with off-
axis illumination together, the resolution and depth of focus
for 0.35 μm dense line/space and line isolated could be
improved.
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