Chemical Vapor Deposition of Tantalum Nitride Diffusion arrier for Copper Metallization

• Main Authors: Chung - En Tsai, 蔡重恩
• Other Authors: Hsin - Tien Chiu
• Format: Others
• Language: zh-TW
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/87769440070049750499

碩士 === 國立交通大學 === 應用化學系 === 83 === The imido complexes Ta(=NR)Cl3Py2 and Ta(=NR)(NEt2)3 (R=tBu, iPr,nPr) were successful synthesized .Ta(=NBu)(NEt2)3 was used as a single-source precursor to deposition thin films on Si, SiO2/Si,in a low-pressure chemical vapor deposition reactor.De- position experiments were carried out at 450℃-650℃ while the precursor was vaporized at 40℃.The films were characterized by SEM,WDS,AES,ESCA,TEM,AFM.Volatile products were indentified by GC-MS and RGA.A layer of Cu was deposition on the TaN thin films obtained in the experiment.Four-point probe method ,RBS, SEM,TEM and SIMS studies all indicated that interdiffusionetween the Cu atoms and the Si atoms of the substrates effectively blocked to temperatures below 550℃ by this layer of TaN