| Summary: | 碩士 === 國立交通大學 === 應用化學系 === 83 === The imido complexes Ta(=NR)Cl3Py2 and Ta(=NR)(NEt2)3 (R=tBu,
iPr,nPr) were successful synthesized .Ta(=NBu)(NEt2)3 was used
as a single-source precursor to deposition thin films on Si,
SiO2/Si,in a low-pressure chemical vapor deposition reactor.De-
position experiments were carried out at 450℃-650℃ while the
precursor was vaporized at 40℃.The films were characterized by
SEM,WDS,AES,ESCA,TEM,AFM.Volatile products were indentified by
GC-MS and RGA.A layer of Cu was deposition on the TaN thin
films obtained in the experiment.Four-point probe method ,RBS,
SEM,TEM and SIMS studies all indicated that
interdiffusionetween the Cu atoms and the Si atoms of the
substrates effectively blocked to temperatures below 550℃ by
this layer of TaN
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