Low Voltage Hot Carrier Effects in Submicron MOSFET's
碩士 === 國立交通大學 === 電子研究所 === 83 === As the semiconductor technology is moving rapidly into deep submicron regime, the power supply voltage used in the MOS circuits is expected to scale down to avoid serious reliability problems caused by hot...
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| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91256202330740395196 |