| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 83 === Silicon on insulator (SOI) technology is a promising candidate
for future ULSI as the quality of SOI material continues to
improve. Thin (less than 1000A) SOI film thickness which makes
fully depleted SOI MOSFETs is important for minimization of
short channel effects, easy isolation, elimination of latch-up,
steeper subthreshold slopes, and increased current drive
capability which will make low power and high speed devices
work well. The purpose of this research is to investigate: A.
the dependence of fully depleted SOI as the devices are scaled
down to deep submicron area. Three key parameters: (1). The
threshold voltage (2). Subthreshold swing (3). Current drive
capability B. the scaling rule of CMOS/SOI. Si film thickness,
gate oxide thickness , channel length, and channel doping will
be the key parameters in this investigation. 2D device
simulator is used in device optimization and in gaining insight
of physical mechanism.
|
|---|
