Accurate Modeling of Back-Gate Bias and Temperature Effect in Weakly Inverted MOSFETs
碩士 === 國立交通大學 === 電子研究所 === 83 === A simple and accurate model describing the dc behavior of MSOFET operated in weak inversion is derived empirically based on the physically-based formulation. This model includes only four parmeters a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01763708188743191034 |