Studies of Semiconductor Quantum Well Lasers and Their Material Properties
博士 === 國立交通大學 === 電子研究所 === 83 === In this disertation, we study the device performance and the related material technologies of semiconductor quantum well lasers. The optimum structure for 980nm laser has the Al mole fraction of 0.4 and the guiding layer...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01449630431044767581 |