Fabrication and Characterization of Silicided Shallow Junctions for Submicron Devices
博士 === 國立交通大學 === 電子研究所 === 83 === Good Pd-silicided p+n diodes with ideality factor of about 1.05 and leakage current of a few nA/cm2 could be obtained under annealing temperatures as low as 500(C and 550(C for the ITM and ITS samples. Excellent n+p diod...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65079863819545474709 |