Fabrication and Characterization of Silicided Shallow Junctions for Submicron Devices

• Main Authors: Cheng-Tung Lin, 林正堂
• Other Authors: Huang-Chung Cheng
• Format: Others
• Language: en_US
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/65079863819545474709

博士 === 國立交通大學 === 電子研究所 === 83 === Good Pd-silicided p+n diodes with ideality factor of about 1.05 and leakage current of a few nA/cm2 could be obtained under annealing temperatures as low as 500(C and 550(C for the ITM and ITS samples. Excellent n+p diodes have been fabricated using Pd and Pd2Si as the implantation barrier. Furthermore, implantation of phosphorus ions into silicide films is found to effectively stabilize silicide films from degradation, both in ITM and ITS schemes. No correlation between implantation energy and silicide degradation temperature was found. By properly implanting BF2+ ions into thin poly-Si films (1500 A) and subsequent annealing, the non-silicided ITP p+n junction diodes with a leakage of 1 nA/cm2 and a junction depth of about 0.05um have been achieved. Excellent ITP n+p junctions can be obtained for annealing temperatures at 900C or above even for the high energy phosphorus implantation cases, which introduces severe damages in silicon substrate. However, only the high dose implanted samples can achieve good junction characteristics after a 800C annealing.