| Summary: | 博士 === 國立交通大學 === 電子研究所 === 83 === Good Pd-silicided p+n diodes with ideality factor of about 1.05
and leakage current of a few nA/cm2 could be obtained under
annealing temperatures as low as 500(C and 550(C for the ITM
and ITS samples. Excellent n+p diodes have been fabricated
using Pd and Pd2Si as the implantation barrier. Furthermore,
implantation of phosphorus ions into silicide films is found to
effectively stabilize silicide films from degradation, both in
ITM and ITS schemes. No correlation between implantation energy
and silicide degradation temperature was found. By properly
implanting BF2+ ions into thin poly-Si films (1500 A) and
subsequent annealing, the non-silicided ITP p+n junction
diodes with a leakage of 1 nA/cm2 and a junction depth of about
0.05um have been achieved. Excellent ITP n+p junctions can be
obtained for annealing temperatures at 900C or above even for
the high energy phosphorus implantation cases, which introduces
severe damages in silicon substrate. However, only the high
dose implanted samples can achieve good junction
characteristics after a 800C annealing.
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