| Summary: | 博士 === 國立交通大學 === 電子研究所 === 83 === In this thesis, we study the properties of thin oxides
thermally grown on reactive-ion-etched (RIE) silicon substrates
in N2O and diluted O2 ambient. The interface microroughness is
strongly dependent on the RIE conditions and the post etching
treatments. Furthermore, using the after-treatment-chamber
(ATC) process, CF4 addition in the O2 plasma can further
improve the time-zero-to-dielectric-breakdown (TZDB)
characteristics of the thin oxides as compared with pure O2
plasma. As compared with pure oxides grown on the etched
silicon in dry oxygen, N2O-grown oxides exhibit significantly
stronger immunity to the RIE- induced damages. N2O oxidation of
the etched specimens treated with a proper after-treatment-
chamber (ATC) process result in the best electrical properties,
including TZDB and time- dependent-dielectric-breakdown (TDDB)
characteristics. In addition, the SiO2 and silicon substrate
damages produced by Cl2- and HBr-based electron cyclotron
resonance (ECR) plasma etching after the poly-Si overetch has
been investigated. The current-voltage (I-V) characteristics of
the Schotthy barrier diodes are formed on the plasma damaged
silicon substrates to characterize the influence of the plasma
exposure.
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