Deep Level Transient Spectroscopy and Electrical Characteristic Measurements of Schottky Diode on GaN

• Main Authors: Tsung-Cheng Huang, 黃宗正
• Other Authors: Wei-I Lee
• Format: Others
• Language: zh-TW
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/74128294740524315862

碩士 === 國立交通大學 === 電子物理學系 === 83 === The III-V nitrides and their alloys are promising materials for applications in the blue and ultraviolet wavelength range. Recently, GaN blue light-emitting diodes(LEDs) were obtained and it have become a focus for the research in the blue opto- electronic devices. The existence of defects is unavoidable in all semiconductor materials. Most defects are formed due to impurities or crystal imperfections. Defects play important roles in device performance because they affect material elec- tronic and optical characters. In our experiments,we measured barrier heights and defects on GaN schottky diodes.