The Study of InGaAs-GaAs Uniform and Graded Doped-Channel Field or
碩士 === 國立成功大學 === 電機工程研究所 === 83 === In this study, we propose and demonstrate the doped-channel MIS- like FET ( DMT's ) based on the GaAs/InGaAs system. The compound is employed for its higher electron mobility than GaAs. In these str...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30208184472094019866 |