The Study of InGaAs-GaAs Uniform and Graded Doped-Channel Field or
碩士 === 國立成功大學 === 電機工程研究所 === 83 === In this study, we propose and demonstrate the doped-channel MIS- like FET ( DMT's ) based on the GaAs/InGaAs system. The compound is employed for its higher electron mobility than GaAs. In these str...
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1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30208184472094019866 |
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ndltd-TW-083NCKU04420132015-10-13T12:53:36Z http://ndltd.ncl.edu.tw/handle/30208184472094019866 The Study of InGaAs-GaAs Uniform and Graded Doped-Channel Field or 砷化銦鎵-砷化鎵均勻分佈及漸變式摻雜通道場效電晶體之研製 Gau-Ming Lyuu 呂高銘 碩士 國立成功大學 電機工程研究所 83 In this study, we propose and demonstrate the doped-channel MIS- like FET ( DMT's ) based on the GaAs/InGaAs system. The compound is employed for its higher electron mobility than GaAs. In these structures, the advantages are a larger breakdown compared with conventional MESFET and a larger gate bias swing modulation-doped FET. On the other hand, the results of the model we adopt in simulation are in agreement with the experimental And, we could manifest the performance of the doped-channel FET by this model. Consequently, the devices demonstrate a good potential for high-speed, high-power circuits applications. Wen-Chau Liu 劉文超 1995 學位論文 ; thesis 58 en_US |
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NDLTD |
| language |
en_US |
| format |
Others
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NDLTD |
| description |
碩士 === 國立成功大學 === 電機工程研究所 === 83 === In this study, we propose and demonstrate the doped-channel MIS-
like FET ( DMT's ) based on the GaAs/InGaAs system. The
compound is employed for its higher electron mobility than
GaAs. In these structures, the advantages are a larger
breakdown compared with conventional MESFET and a larger gate
bias swing modulation-doped FET. On the other hand, the results
of the model we adopt in simulation are in agreement with the
experimental And, we could manifest the performance of the
doped-channel FET by this model. Consequently, the devices
demonstrate a good potential for high-speed, high-power
circuits applications.
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| author2 |
Wen-Chau Liu |
| author_facet |
Wen-Chau Liu Gau-Ming Lyuu 呂高銘 |
| author |
Gau-Ming Lyuu 呂高銘 |
| spellingShingle |
Gau-Ming Lyuu 呂高銘 The Study of InGaAs-GaAs Uniform and Graded Doped-Channel Field or |
| author_sort |
Gau-Ming Lyuu |
| title |
The Study of InGaAs-GaAs Uniform and Graded Doped-Channel Field or |
| title_short |
The Study of InGaAs-GaAs Uniform and Graded Doped-Channel Field or |
| title_full |
The Study of InGaAs-GaAs Uniform and Graded Doped-Channel Field or |
| title_fullStr |
The Study of InGaAs-GaAs Uniform and Graded Doped-Channel Field or |
| title_full_unstemmed |
The Study of InGaAs-GaAs Uniform and Graded Doped-Channel Field or |
| title_sort |
study of ingaas-gaas uniform and graded doped-channel field or |
| publishDate |
1995 |
| url |
http://ndltd.ncl.edu.tw/handle/30208184472094019866 |
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