| Summary: | 碩士 === 國立成功大學 === 電機工程研究所 === 83 === In this study, we propose and demonstrate the doped-channel MIS-
like FET ( DMT's ) based on the GaAs/InGaAs system. The
compound is employed for its higher electron mobility than
GaAs. In these structures, the advantages are a larger
breakdown compared with conventional MESFET and a larger gate
bias swing modulation-doped FET. On the other hand, the results
of the model we adopt in simulation are in agreement with the
experimental And, we could manifest the performance of the
doped-channel FET by this model. Consequently, the devices
demonstrate a good potential for high-speed, high-power
circuits applications.
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