Characteristics of Mulitiple δ-doped GaAs Field Effect Transistors gown by LP-MOVCD
碩士 === 國立成功大學 === 電機工程研究所 === 83 === GaAs field effect transistors (FETs) utilizing multiple -dopig profiles grown by low-pressure metalorganic chemicalapor deposition (LP-MOCVD) have been fabricated successfully.e use different δ-doping pe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50332572522776978625 |