ZnSSe epilayers grown on GaP by MOCVD
碩士 === 國立中山大學 === 電機工程研究所 === 82 === ZnSxSe1-x with its variation in energy gap from 2.68 to 3.68 eV at room temperature which ranges from blue to ultraviolet region is an attractive candidate for short wavelength light emitting devices. Ho...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53353360920164224227 |