Two-Dimensional Simulation and Analysis Amorphous Silicon istors

• Main Authors: Kuo-Don Hong, 洪國棟
• Other Authors: Yao-Tsung Tsai
• Format: Others
• Language: en_US
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/37116049871825312003

碩士 === 國立中央大學 === 資訊及電子工程研究所 === 82 === The major purpose of this thesis are to develop an amorphous silicon based two-dimensional device simulator and use this simulator to study device performance depending on design parameters. Owing to the trap states existing in the band gap of amorphous material, we present two models to solve the differculties in mathematics : 1. We develop an analytical trapped-charge model by assuming two exponential distribution of density of states to replace conventional numerical integration. 2. In order to eliminate the numerical instability due to the trapped carriers, we present a simple adapted Gummel method that has a good convergence rate. Further, we discuss the device performance on design parameters such as : 1. the dependence of current crowding effect on the density of states. Not only amplititude of output current density can be effected by the distribution of density of states but also current crowding effect. 2. the dependence of dc performance on the overlap of electrodes. The effect by overlapped will be discussed in detail. With the analysis and simulation, it is helpful to estimate device performance before fabrication and to find the optimal design for various application.