Two-Dimensional Simulation of Quantum Well Surface Emitting Laser Diodes

• Main Authors: Re-Yi Chen, 陳瑞益
• Other Authors: Tahui Wang
• Format: Others
• Language: en_US
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/58763217853896731490

碩士 === 國立交通大學 === 電子研究所 === 82 === In the past few years, there has been an increasing interest in the realization of vertical-cavity surface-emitting lasers (VCSEL's). This is mainly due to the attractive features of these devices such as on-wafer testing, and high-density 2D arrays. To study the characteristics of these devices and to determine the optimal device structure, a numerical simulator for VCSEL's necessary. In this thesis, we develop a two- dimensional for VCSEL's. The physical model includes the Poisson equation, continuity equation, Schrodinger equation, coupled-mode equation and photon rate equation. The result we obtain from the simulation is the laser output power versus current, band diagram, carrier concentration and optical wave distributions. In addition, quantum-size-effects such as the subband energies and the overlap integral for optical transitions can be derived from the simulation. We also change the device structure of VCSEL's such as the number of mirror thickness of active layer and cavity size to investigate the geometrical effect on the laser performance. The results of are used as guidelines for VCSEL structure design and